The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films
- Авторлар: Asalzadeh S.1, Yasserian K.1
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Мекемелер:
- Department of Physics, Islamic Azad University
- Шығарылым: Том 53, № 12 (2019)
- Беттер: 1603-1607
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207363
- DOI: https://doi.org/10.1134/S1063782619160036
- ID: 207363
Дәйексөз келтіру
Аннотация
This paper investigates the effect of various postannealing cooling rates on structural and electrical properties of Titanium Dioxide (TiO2) thin films. TiO2 thin films were deposited on a silicon substrate using DC magnetron sputtering technique. After annealing TiO2 thin films at 600°C, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600°C to room temperature under 3 different rates: 2°C/min, 6°C/min, and 8°C/min. The Surface morphology, crystal structure, and electrical properties of the samples were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) techniques. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of TiO2. The sample with 2°C/min cooling rate has the largest grain size and highest electrical resistivity, while the sample with 8°C/min cooling rate has the smallest grain size and lowest electrical resistivity.
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Авторлар туралы
S. Asalzadeh
Department of Physics, Islamic Azad University
Хат алмасуға жауапты Автор.
Email: sasalzad@hawk.iit.edu
Иран, Karaj, Karaj Branch
K. Yasserian
Department of Physics, Islamic Azad University
Email: sasalzad@hawk.iit.edu
Иран, Karaj, Karaj Branch