Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time
- 作者: Ageeva N.1, Bronevoi I.1, Zabegaev D.1, Krivonosov A.1
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隶属关系:
- Kotel’nikov Institute of Radioengeneering and Electronics, Russian Academy of Sciences
- 期: 卷 53, 编号 11 (2019)
- 页面: 1431-1438
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207263
- DOI: https://doi.org/10.1134/S1063782619110022
- ID: 207263
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详细
During the powerful picosecond optical pumping of a thin (~1 μm) GaAs layer, a stimulated intense (up to 1 GW/cm2) picosecond emission arises. It is found that the characteristic picosecond relaxation time τr of the emission and of the carrier density increase with an increase of the diameter of the pump pulse for a fixed density of the pump-pulse energy. Due to the relation between the density and the temperature of carriers in the case of high-intensity emission (in the saturation state of emission amplification), the time τr is associated with the characteristic temperature-relaxation time τT of photopumped carriers, which was determined previously theoretically taking into account the emission-induced heating of carriers. The corresponding analytical expressions for τr as a function of τT are consistent with the above experimental results.
作者简介
N. Ageeva
Kotel’nikov Institute of Radioengeneering and Electronics, Russian Academy of Sciences
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
I. Bronevoi
Kotel’nikov Institute of Radioengeneering and Electronics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
D. Zabegaev
Kotel’nikov Institute of Radioengeneering and Electronics, Russian Academy of Sciences
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009
A. Krivonosov
Kotel’nikov Institute of Radioengeneering and Electronics, Russian Academy of Sciences
Email: bil@cplire.ru
俄罗斯联邦, Moscow, 125009