Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses
- 作者: Marchenko A.1, Seregin P.1, Terukov E.2, Shakhovich K.1
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隶属关系:
- Herzen State Pedagogical University of Russia
- Saint Petersburg Electrotechnical University LETI
- 期: 卷 53, 编号 5 (2019)
- 页面: 711-716
- 栏目: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/206219
- DOI: https://doi.org/10.1134/S1063782619050166
- ID: 206219
如何引用文章
详细
The formation of antisite defects in Ge20Te80 and Ge15As4Te81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the 119mmSn(119mSn), 119mTe(119mSn), 125Sn(125Te), and 125mTe(125Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.
作者简介
A. Marchenko
Herzen State Pedagogical University of Russia
Email: ppseregin@mail.ru
俄罗斯联邦, St. Petersburg, 191186
P. Seregin
Herzen State Pedagogical University of Russia
编辑信件的主要联系方式.
Email: ppseregin@mail.ru
俄罗斯联邦, St. Petersburg, 191186
E. Terukov
Saint Petersburg Electrotechnical University LETI
Email: ppseregin@mail.ru
俄罗斯联邦, St. Petersburg, 197376
K. Shakhovich
Herzen State Pedagogical University of Russia
Email: ppseregin@mail.ru
俄罗斯联邦, St. Petersburg, 191186