Discovery of III–V Semiconductors: Physical Properties and Application
- 作者: Mikhailova M.1, Moiseev K.1, Yakovlev Y.1
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隶属关系:
- Ioffe Institute
- 期: 卷 53, 编号 3 (2019)
- 页面: 273-290
- 栏目: Review
- URL: https://journals.rcsi.science/1063-7826/article/view/205802
- DOI: https://doi.org/10.1134/S1063782619030126
- ID: 205802
如何引用文章
详细
This overview is devoted to the discovery, development of the technology, and investigation of III–V semiconductors performed at the Ioffe Institute, where the first steps in fabricating III–V semiconductors were taken in 1950 and investigations into their fundamental properties were begun under the leadership of two outstanding scientists—Nina Aleksandrovna Goryunova and Dmitry Nikolayevich Nasledov. Further development of these investigations is reflected in the works of followers and pupils of D.N. Nasledov, who have worked and continue to work at subsidiaries of the Ioffe Institute. The contribution of these investigations to studying heterostructures based on III–V compounds as well as to the development of semiconductor devices for electronics, optoelectronics, and photonics is considered.
作者简介
M. Mikhailova
Ioffe Institute
Email: mkd@iropt2.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Moiseev
Ioffe Institute
编辑信件的主要联系方式.
Email: mkd@iropt2.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Yakovlev
Ioffe Institute
Email: mkd@iropt2.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021