Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals
- 作者: Yafarov R.1
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
- 期: 卷 53, 编号 1 (2019)
- 页面: 14-21
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205552
- DOI: https://doi.org/10.1134/S106378261901024X
- ID: 205552
如何引用文章
详细
The regularities governing the surface modification of silicon crystals during microwave-plasma microprocessing in different chemically active gaseous media are investigated. This modification is shown to be caused by the formation of built-in surface potentials, which, depending on the semiconductor electrical-conductivity type, differently affect the field-emission properties and surface electron transport in devices based on them.
作者简介
R. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
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Email: pirpc@yandex.ru
俄罗斯联邦, Saratov, 410019