Email this article Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals
- Authors: Yafarov R.K.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
- Issue: Vol 53, No 1 (2019)
- Pages: 14-21
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205552
- DOI: https://doi.org/10.1134/S106378261901024X
- ID: 205552
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Abstract
The regularities governing the surface modification of silicon crystals during microwave-plasma microprocessing in different chemically active gaseous media are investigated. This modification is shown to be caused by the formation of built-in surface potentials, which, depending on the semiconductor electrical-conductivity type, differently affect the field-emission properties and surface electron transport in devices based on them.
About the authors
R. K. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
Author for correspondence.
Email: pirpc@yandex.ru
Russian Federation, Saratov, 410019
