Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles
- 作者: Strel’chuk A.1, Kozlovski V.2, Lebedev A.1
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隶属关系:
- Ioffe Institute
- Peter the Great St. Petersburg State Polytechnic University
- 期: 卷 52, 编号 13 (2018)
- 页面: 1758-1762
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204937
- DOI: https://doi.org/10.1134/S1063782618130171
- ID: 204937
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详细
The radiation hardness of three types of commercial Schottky rectifier diodes based on silicon carbide (4H-SiC, base layer doping level (3–7) × 1015 cm–3) under electron (0.9 or 3.5 MeV electrons) and proton irradiation (15 MeV protons) is studied. The forward and reverse current–voltage characteristics of the diodes are monitored. In the initial state, the diodes have a breakdown voltage of 1–2 kV and an almost ideal forward current–voltage characteristic. It is found that the series resistance of the diodes is the most sensitive to radiation and governs the radiation hardness. This resistance grows by nearly 10 orders of magnitude and reaches a value of 109 Ω at high doses. The threshold doses of electron irradiation fall within the range Dth ≈ (0.5–2) × 1016 cm–2 and depend on the electron energy and doping level of the base layer, and those of proton irradiation, Dth ≈ 5 × 1013 cm–2.
作者简介
A. Strel’chuk
Ioffe Institute
编辑信件的主要联系方式.
Email: anatoly.strelchuk@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kozlovski
Peter the Great St. Petersburg State Polytechnic University
Email: anatoly.strelchuk@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Lebedev
Ioffe Institute
Email: anatoly.strelchuk@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021