Ab Initio Study of the ZnSnSb2 Semiconductor
- 作者: Basalaev Y.1
-
隶属关系:
- Kemerovo State University
- 期: 卷 52, 编号 13 (2018)
- 页面: 1715-1720
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204890
- DOI: https://doi.org/10.1134/S1063782618130043
- ID: 204890
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详细
For the chalcopyrite-like ZnSnSb2 crystal, the equilibrium crystal-lattice parameters a = 6.2893 Å, c = 12.5975 Å, and u = 0.2314 and the band structure involving the band gap Eg = 0.43 eV are determined by ab initio calculations based on density functional theory. The phonon vibrational frequencies, the elastic constants (C11 = 89.3, C12 = 41.9, C13 = 41.8, C33 = 90.4, C44 = 43.9, and C66 = 44.1), the phase velocities of elastic waves, the elasticity moduli, the microhardness (2.29 GPa), and the Grüneisen elastic parameter (1.5) are calculated. The temperature dependences of the heat capacity and thermodynamic potential are considered (in the range from 20 to 633 K).
作者简介
Yu. Basalaev
Kemerovo State University
编辑信件的主要联系方式.
Email: ymbas@mail.ru
俄罗斯联邦, Kemerovo, 650043