Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
- 作者: Mizerov A.1, Timoshnev S.1, Sobolev M.1, Nikitina E.1, Shubina K.1, Berezovskaia T.1, Shtrom I.1, Bouravleuv A.1
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隶属关系:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- 期: 卷 52, 编号 12 (2018)
- 页面: 1529-1533
- 栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204659
- DOI: https://doi.org/10.1134/S1063782618120175
- ID: 204659
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详细
The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.
作者简介
A. Mizerov
St. Petersburg National Research Academic University, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
S. Timoshnev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
M. Sobolev
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
E. Nikitina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
K. Shubina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
T. Berezovskaia
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
I. Shtrom
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: andreymizerov@rambler.ru
俄罗斯联邦, St. Petersburg, 194021