Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K
- 作者: Kozyukhin S.1,2, Bedin S.3, Rudakovskaya P.1, Ivanova O.1, Ivanov V.1,4
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隶属关系:
- Kurnakov Institute of General and Inorganic Chemistry
- National Research Tomsk State University (Faculty of Chemistry)
- Moscow Pedagogical State University
- Moscow University of Technology
- 期: 卷 52, 编号 7 (2018)
- 页面: 885-890
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203664
- DOI: https://doi.org/10.1134/S1063782618070114
- ID: 203664
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详细
The dielectric properties of nanocrystalline tungsten oxide are studied in the temperature range of 223–293 K and in the frequency range ν = 10–2–106 Hz. Powders of WO3 with particle sizes of 110, 150, and 200 nm are prepared by the heat treatment of ammonium paratungstate at various temperatures. It is established that the frequency dependences of the conductivity for all samples increase with an increase in frequency, while the polarization characteristics ε'(ν) and ε"(ν) decrease. It is found that the frequency dependences of the conductivity are described by a function of the form νs with an index in the range of (0.83–0.90) ± 0.01, which is characteristic of the “hopping” mechanism of charged-particle motion (complexes) over localized states confined by potential barriers and structural defects.
作者简介
S. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry; National Research Tomsk State University (Faculty of Chemistry)
编辑信件的主要联系方式.
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Moscow, 119991; Tomsk, 634050
S. Bedin
Moscow Pedagogical State University
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Moscow, 119991
P. Rudakovskaya
Kurnakov Institute of General and Inorganic Chemistry
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Moscow, 119991
O. Ivanova
Kurnakov Institute of General and Inorganic Chemistry
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Moscow, 119991
V. Ivanov
Kurnakov Institute of General and Inorganic Chemistry; Moscow University of Technology
Email: sergkoz@igic.ras.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119454