Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
- 作者: Ratnikov V.1, Sheglov M.1, Ber B.1, Kazantsev D.1, Osinnykh I.2,3, Malin T.2, Zhuravlev K.2,3
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隶属关系:
- Ioffe Institute
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 52, 编号 2 (2018)
- 页面: 221-225
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202436
- DOI: https://doi.org/10.1134/S1063782618020136
- ID: 202436
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详细
The deformation mode and defect structure of AlxGa1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 1019 cm–3. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 1010 and 8.2 × 1010 cm–2, respectively.
作者简介
V. Ratnikov
Ioffe Institute
编辑信件的主要联系方式.
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Sheglov
Ioffe Institute
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
B. Ber
Ioffe Institute
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Kazantsev
Ioffe Institute
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Osinnykh
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
T. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ratnikov@mail.ioffe.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090