Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
- Authors: Ratnikov V.V.1, Sheglov M.P.1, Ber B.Y.1, Kazantsev D.Y.1, Osinnykh I.V.2,3, Malin T.V.2, Zhuravlev K.S.2,3
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Affiliations:
- Ioffe Institute
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 52, No 2 (2018)
- Pages: 221-225
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202436
- DOI: https://doi.org/10.1134/S1063782618020136
- ID: 202436
Cite item
Abstract
The deformation mode and defect structure of AlxGa1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 1019 cm–3. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 1010 and 8.2 × 1010 cm–2, respectively.
About the authors
V. V. Ratnikov
Ioffe Institute
Author for correspondence.
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. P. Sheglov
Ioffe Institute
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. Ya. Ber
Ioffe Institute
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. Yu. Kazantsev
Ioffe Institute
Email: ratnikov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Osinnykh
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ratnikov@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
T. V. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: ratnikov@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: ratnikov@mail.ioffe.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090