Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films
- 作者: Kaminsky V.1, Soloviev S.1, Khavrov G.1, Sharenkova N.1
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隶属关系:
- Ioffe Institute
- 期: 卷 52, 编号 1 (2018)
- 页面: 41-43
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/202224
- DOI: https://doi.org/10.1134/S1063782618010116
- ID: 202224
如何引用文章
详细
The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm1–xGdxS thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.
作者简介
V. Kaminsky
Ioffe Institute
编辑信件的主要联系方式.
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Soloviev
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Khavrov
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Sharenkova
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021