Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films
- Autores: Kaminsky V.1, Soloviev S.1, Khavrov G.1, Sharenkova N.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 52, Nº 1 (2018)
- Páginas: 41-43
- Seção: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/202224
- DOI: https://doi.org/10.1134/S1063782618010116
- ID: 202224
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Resumo
The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm1–xGdxS thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.
Sobre autores
V. Kaminsky
Ioffe Institute
Autor responsável pela correspondência
Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Soloviev
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021
G. Khavrov
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Sharenkova
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021