Radiation-produced defects in germanium: Experimental data and models of defects
- 作者: Emtsev V.1, Kozlovski V.2, Poloskin D.1, Oganesyan G.1
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隶属关系:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 51, 编号 12 (2017)
- 页面: 1571-1587
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202005
- DOI: https://doi.org/10.1134/S1063782617120065
- ID: 202005
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详细
The problem of radiation-produced defects in n-Ge before and after n → p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n → p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ≈EC – 0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ≈EV + 0.1 eV are absolutely dominating in irradiated n-Ge after n → p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered.
作者简介
V. Emtsev
Ioffe Institute
编辑信件的主要联系方式.
Email: emtsev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: emtsev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
D. Poloskin
Ioffe Institute
Email: emtsev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Oganesyan
Ioffe Institute
Email: emtsev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021