Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
- 作者: Bochkareva N.1, Voronenkov V.1, Gorbunov R.1, Virko M.2, Kogotkov V.2, Leonidov A.2, Vorontsov-Velyaminov P.3, Sheremet I.4, Shreter Y.1
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隶属关系:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg State University
- Financial University under the Government of the Russian Federation
- 期: 卷 51, 编号 9 (2017)
- 页面: 1186-1193
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201162
- DOI: https://doi.org/10.1134/S1063782617090068
- ID: 201162
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详细
A study of the current and capacitance dependences on the forward voltage in Au/n-GaN Schottky diodes, the sub-band optical absorption spectra, and the defect photoluminescence in n-GaN bulk crystals and thin layers is reported. It is shown that defect-assisted tunneling is the dominant transport mechanism for forward-biased Schottky contacts on n-GaN. The dependences of the current and capacitance on forward bias reflect the energy spectrum of defects in the band gap of n-GaN: the rise in the density of deep states responsible for yellow photoluminescence in GaN with increasing energy and the steep exponential tail of states with an Urbach energy of EU = 50 meV near the conduction-band edge. A decrease in the frequency of electron hops near the Au/n-GaN interface results in a wide distribution of local dielectric relaxation times and in a dramatic transformation of the electric-field distribution in the space-charge region under forward biases.
作者简介
N. Bochkareva
Ioffe Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Voronenkov
Ioffe Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
R. Gorbunov
Ioffe Institute
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Virko
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
V. Kogotkov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Leonidov
Peter the Great St. Petersburg Polytechnic University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
P. Vorontsov-Velyaminov
St. Petersburg State University
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 199034
I. Sheremet
Financial University under the Government of the Russian Federation
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, Moscow, 125993
Yu. Shreter
Ioffe Institute
编辑信件的主要联系方式.
Email: y.shreter@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021