Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity
- 作者: Isachenko G.1,2, Samunin A.1, Zaitsev V.1, Gurieva E.1, Konstantinov P.1
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隶属关系:
- Ioffe Institute
- ITMO University
- 期: 卷 51, 编号 8 (2017)
- 页面: 1005-1008
- 栏目: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200813
- DOI: https://doi.org/10.1134/S1063782617080127
- ID: 200813
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详细
The thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 1020 cm–3 are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.
作者简介
G. Isachenko
Ioffe Institute; ITMO University
编辑信件的主要联系方式.
Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
A. Samunin
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Zaitsev
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Gurieva
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
P. Konstantinov
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021