Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity

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详细

The thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 1020 cm–3 are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.

作者简介

G. Isachenko

Ioffe Institute; ITMO University

编辑信件的主要联系方式.
Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101

A. Samunin

Ioffe Institute

Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Zaitsev

Ioffe Institute

Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

E. Gurieva

Ioffe Institute

Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

P. Konstantinov

Ioffe Institute

Email: g.isachenko@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021


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