Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity
- Авторы: Isachenko G.1,2, Samunin A.1, Zaitsev V.1, Gurieva E.1, Konstantinov P.1
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Учреждения:
- Ioffe Institute
- ITMO University
- Выпуск: Том 51, № 8 (2017)
- Страницы: 1005-1008
- Раздел: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200813
- DOI: https://doi.org/10.1134/S1063782617080127
- ID: 200813
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Аннотация
The thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 1020 cm–3 are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.
Об авторах
G. Isachenko
Ioffe Institute; ITMO University
Автор, ответственный за переписку.
Email: g.isachenko@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101
A. Samunin
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Zaitsev
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Россия, St. Petersburg, 194021
E. Gurieva
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Россия, St. Petersburg, 194021
P. Konstantinov
Ioffe Institute
Email: g.isachenko@mail.ioffe.ru
Россия, St. Petersburg, 194021