Local thermoelectric effects in wide-gap semiconductors
- 作者: Ordin S.1, Zhilyaev Y.1, Zelenin V.1, Panteleev V.1
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隶属关系:
- Ioffe Institute
- 期: 卷 51, 编号 7 (2017)
- 页面: 883-886
- 栏目: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200267
- DOI: https://doi.org/10.1134/S1063782617070296
- ID: 200267
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详细
Experimental confirmation of the appearance of local thermal electromotive forces, which were previously found in structures based on silicon p–n junctions, is obtained. The current–voltage and frequency characteristics of an asymmetric potential barrier at the GaN/Mg boundary and of a p–i–n structure based on GaAs are studied. It is shown that, similarly to wide-gap semiconductors, the contribution of local thermal electromotive forces determines the features of the current–voltage characteristics and the frequency features of the current–power characteristics, in particular the Gaussian resonance. Proper account and use of local thermoelectric forces makes it possible to attain a drastic increase in the efficiency of thermoelectric conversion and an improvement in the operating parameters of microelectronic components.
作者简介
S. Ordin
Ioffe Institute
编辑信件的主要联系方式.
Email: stas_ordin@mail.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Zhilyaev
Ioffe Institute
Email: stas_ordin@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Zelenin
Ioffe Institute
Email: stas_ordin@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Panteleev
Ioffe Institute
Email: stas_ordin@mail.ru
俄罗斯联邦, St. Petersburg, 194021