Study of the distribution profile of iron ions implanted into silicon
- 作者: Kozhemyako A.1, Balakshin Y.2, Shemukhin A.2, Chernysh V.1,2
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隶属关系:
- Faculty of Physics
- Skobeltsyn Institute of Nuclear Physics
- 期: 卷 51, 编号 6 (2017)
- 页面: 745-750
- 栏目: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/200051
- DOI: https://doi.org/10.1134/S1063782617060185
- ID: 200051
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详细
Iron ions with energies of 90 and 250 keV and a dose of 1016 cm–2 are implanted into a silicon single crystal with the (110) orientation. The method of Rutherford backscattering in combination with channeling is used to study the distribution profiles of the introduced impurity and also the profiles of the distribution of radiation-induced defects in the crystal lattice. Experimental data are compared with the results of simulation performed using the TRIM software package. It is shown that, at an energy of 4.6 keV/nucleon, the average projected ranges coincide; however, at an energy of 1.6 keV/nucleon, the difference amounts to 35%. In addition, it is shown that the calculation incorrectly takes into account the dose dependence at energies of 1.6–4.6 keV/nucleon.
作者简介
A. Kozhemyako
Faculty of Physics
编辑信件的主要联系方式.
Email: anastasiia.kozhemyako@mail.ru
俄罗斯联邦, Moscow, 119991
Yu. Balakshin
Skobeltsyn Institute of Nuclear Physics
Email: anastasiia.kozhemyako@mail.ru
俄罗斯联邦, Moscow, 119991
A. Shemukhin
Skobeltsyn Institute of Nuclear Physics
Email: anastasiia.kozhemyako@mail.ru
俄罗斯联邦, Moscow, 119991
V. Chernysh
Faculty of Physics; Skobeltsyn Institute of Nuclear Physics
Email: anastasiia.kozhemyako@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119991