Silicon nanowire array architecture for heterojunction electronics
- 作者: Solovan M.1, Brus V.2, Mostovyi A.1, Maryanchuk P.1, Orletskyi I.1, Kovaliuk T.1, Abashin S.3
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隶属关系:
- Department of Electronics and Energy Engeneering
- Institute for Silicon Photovoltaics
- Department of Physics
- 期: 卷 51, 编号 4 (2017)
- 页面: 542-548
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199807
- DOI: https://doi.org/10.1134/S1063782617040200
- ID: 199807
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详细
Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.8 V, short-circuit current Isc = 3.72 mA/cm2 and fill factor FF = 0.5 under illumination of 100 mW/cm2.
作者简介
M. Solovan
Department of Electronics and Energy Engeneering
编辑信件的主要联系方式.
Email: m.solovan@chnu.edu.ua
乌克兰, Chernivtsi, 58012
V. Brus
Institute for Silicon Photovoltaics
Email: m.solovan@chnu.edu.ua
德国, Berlin, 12489
A. Mostovyi
Department of Electronics and Energy Engeneering
Email: m.solovan@chnu.edu.ua
乌克兰, Chernivtsi, 58012
P. Maryanchuk
Department of Electronics and Energy Engeneering
Email: m.solovan@chnu.edu.ua
乌克兰, Chernivtsi, 58012
I. Orletskyi
Department of Electronics and Energy Engeneering
Email: m.solovan@chnu.edu.ua
乌克兰, Chernivtsi, 58012
T. Kovaliuk
Department of Electronics and Energy Engeneering
Email: m.solovan@chnu.edu.ua
乌克兰, Chernivtsi, 58012
S. Abashin
Department of Physics
Email: m.solovan@chnu.edu.ua
乌克兰, Kharkiv, 61070