Effect of gamma irradiation on the photoluminescence of porous silicon
- 作者: Elistratova M.1,2, Romanov N.1,3, Goryachev D.2, Zakharova I.1, Sreseli O.2
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隶属关系:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Lappeenranta University of Technology
- 期: 卷 51, 编号 4 (2017)
- 页面: 483-487
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199745
- DOI: https://doi.org/10.1134/S1063782617040029
- ID: 199745
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详细
The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C60 layer are stable to gamma irradiation and oxidation.
作者简介
M. Elistratova
Peter the Great St. Petersburg Polytechnic University; Ioffe Institute
编辑信件的主要联系方式.
Email: Marina.Elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251; St. Petersburg, 194021
N. Romanov
Peter the Great St. Petersburg Polytechnic University; Lappeenranta University of Technology
Email: Marina.Elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251; Lappeenranta, 53850
D. Goryachev
Ioffe Institute
Email: Marina.Elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Zakharova
Peter the Great St. Petersburg Polytechnic University
Email: Marina.Elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
O. Sreseli
Ioffe Institute
Email: Marina.Elistratova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021