Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength
- 作者: Bannaya V.1
-
隶属关系:
- Moscow State University of Education (MSUE)
- 期: 卷 51, 编号 3 (2017)
- 页面: 290-292
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199539
- DOI: https://doi.org/10.1134/S1063782617030046
- ID: 199539
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详细
It is shown that measurement of the electric-breakdown field Ebr in a classically high magnetic field (H) at T = 4.2 K makes it possible to determine the value of the degree of compensation K in pure germanium with K < 50% much more precisely than at H = 0. The parameter S = Ebr/H is introduced and its dependence S = f(K) is calculated; the obtained curve makes it possible to determine K if H and Ebr are known. To decrease the resistance of the samples, it is recommended that measurements be carried out under “impurity” illumination. It is shown that the value of Ebr is invariable at low intensities of such excitation.
作者简介
V. Bannaya
Moscow State University of Education (MSUE)
编辑信件的主要联系方式.
Email: enikitina@sci.pfu.edu.ru
俄罗斯联邦, Moscow, 119991