Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
- 作者: Karavaev M.1, Kirilenko D.1, Ivanova E.1, Popova T.1, Sitnikova A.1, Sedova I.1, Zamoryanskaya M.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 51, 编号 1 (2017)
- 页面: 54-60
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199312
- DOI: https://doi.org/10.1134/S1063782617010080
- ID: 199312
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详细
Wide-gap ZnSe-based nanoheterostructures grown by molecular-beam epitaxy are studied by local cathodoluminescence and X-ray microanalysis. It is shown that the used methods allow nondestructive determination of the depth, elemental composition, and geometrical parameters of the nanoscale ZnCdSe layer. The accuracy of the results is verified by transmission electron microscopy. The research techniques are based on the possibility of varying the primary electron-beam energy, which results in changes in the regions of characteristic X-ray and cathodoluminescence generation.
作者简介
M. Karavaev
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
D. Kirilenko
Ioffe Physical–Technical Institute
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Ivanova
Ioffe Physical–Technical Institute
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
T. Popova
Ioffe Physical–Technical Institute
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical–Technical Institute
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
I. Sedova
Ioffe Physical–Technical Institute
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
M. Zamoryanskaya
Ioffe Physical–Technical Institute
Email: estonianchameleon@gmail.com
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021