Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

Аннотация

Wide-gap ZnSe-based nanoheterostructures grown by molecular-beam epitaxy are studied by local cathodoluminescence and X-ray microanalysis. It is shown that the used methods allow nondestructive determination of the depth, elemental composition, and geometrical parameters of the nanoscale ZnCdSe layer. The accuracy of the results is verified by transmission electron microscopy. The research techniques are based on the possibility of varying the primary electron-beam energy, which results in changes in the regions of characteristic X-ray and cathodoluminescence generation.