Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range
- 作者: Kunitsyna E.1, Grebenshchikova E.1, Konovalov G.1, Andreev I.1, Yakovlev Y.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 10 (2016)
- 页面: 1403-1407
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198164
- DOI: https://doi.org/10.1134/S1063782616100158
- ID: 198164
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详细
A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the metal-free unilluminated rear surface area of the photodiode chip, it is possible to improve the spectral sensitivity of the photodiodes at wavelengths in the range 1.8–2.4 μm. The most pronounced increase of up to 53% at the sensitivity maximum, compared with the sensitivity of conventional photodiodes with a fully metallized rear surface of the chip, is observed for photodiodes with shallow pits 30 μm in radius on their rear surface. These devices can find wide application in systems measuring the amount of water in petroleum products and the moisture content of paper, soil and grain.
作者简介
E. Kunitsyna
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Grebenshchikova
Ioffe Physical–Technical Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Konovalov
Ioffe Physical–Technical Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Andreev
Ioffe Physical–Technical Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Yakovlev
Ioffe Physical–Technical Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021