Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
- 作者: Seredin P.1, Goloshchapov D.1, Lenshin A.1, Lukin A.1, Fedyukin A.1, Arsentyev I.2, Bondarev A.2, Lubyanskiy Y.2, Tarasov I.2
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隶属关系:
- Vozonezh State University
- Ioffe Physical-Technical Institute
- 期: 卷 50, 编号 9 (2016)
- 页面: 1261-1272
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197962
- DOI: https://doi.org/10.1134/S1063782616090219
- ID: 197962
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详细
Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.
作者简介
P. Seredin
Vozonezh State University
编辑信件的主要联系方式.
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
D. Goloshchapov
Vozonezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Lenshin
Vozonezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Lukin
Vozonezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Fedyukin
Vozonezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
I. Arsentyev
Ioffe Physical-Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
A. Bondarev
Ioffe Physical-Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
Y. Lubyanskiy
Ioffe Physical-Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
I. Tarasov
Ioffe Physical-Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021