Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures
- 作者: Kalygina V.1, Egorova I.1, Novikov V.1, Prudaev I.1, Tolbanov O.1
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隶属关系:
- National Research Tomsk State University
- 期: 卷 50, 编号 9 (2016)
- 页面: 1156-1162
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/197815
- DOI: https://doi.org/10.1134/S1063782616090104
- ID: 197815
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详细
The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO2–Si structures is investigated. The titanium oxide films are prepared by rf magnetron sputtering onto n-Si substrates. The observed features in the behavior of the electrical and photoelectric characteristics of the samples after annealing and treatment in oxygen plasma are attributed to a variation in the phase composition of the oxide film due to the appearance of anatase or rutile crystallites, depending on the treatment conditions.
作者简介
V. Kalygina
National Research Tomsk State University
编辑信件的主要联系方式.
Email: Kalygina@ngs.ru
俄罗斯联邦, Tomsk, 634050
I. Egorova
National Research Tomsk State University
Email: Kalygina@ngs.ru
俄罗斯联邦, Tomsk, 634050
V. Novikov
National Research Tomsk State University
Email: Kalygina@ngs.ru
俄罗斯联邦, Tomsk, 634050
I. Prudaev
National Research Tomsk State University
Email: Kalygina@ngs.ru
俄罗斯联邦, Tomsk, 634050
O. Tolbanov
National Research Tomsk State University
Email: Kalygina@ngs.ru
俄罗斯联邦, Tomsk, 634050