On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

P. G. Serafimovich; M. V. Stepikhova; N. L. Kazanskiy; S. A. Gusev; A. V. Egorov; E. V. Skorokhodov; Z. F. Krasilnik

doi:10.1134/S1063782616080212

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

作者: Serafimovich P.¹^,2, Stepikhova M.³^,4, Kazanskiy N.¹^,2, Gusev S.³^,4, Egorov A.², Skorokhodov E.³^,4, Krasilnik Z.³^,4
隶属关系:
1. Image Processing Systems Institute
2. Samara State Aerospace University (National Research University)
3. Institute for Physics of Microstructures
4. Nizhny Novgorod State University
期: 卷 50, 编号 8 (2016)
页面: 1112-1116
栏目: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://journals.rcsi.science/1063-7826/article/view/197739
DOI: https://doi.org/10.1134/S1063782616080212
ID: 197739

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
统计

详细

The production technology of a photonic-crystal cavity formed as a group of holes in a silicon strip waveguide by ion-beam etching is described. The parasitic effect associated with hole conicity which develops upon hole formation by the given technology is studied. Numerical simulation shows that the hole-conicityinduced decrease in the cavity quality factor can be compensated with consideration for the hole volume. The influence of the waveguide thickness on the resonance wavelength and quality factor of the photonic-crystal cavity is analyzed.

用户名
密码
记住我

忘记您的密码?	注册

用户名
密码
记住我

忘记您的密码?	注册

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

全文:

详细

作者简介

P. Serafimovich

M. Stepikhova

N. Kazanskiy

S. Gusev

A. Egorov

E. Skorokhodov

Z. Krasilnik