Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers
- 作者: Danilov L.1, Petukhov A.1, Mikhailova M.1, Zegrya G.1, Ivanov E.1, Yakovlev Y.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 6 (2016)
- 页面: 778-784
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197253
- DOI: https://doi.org/10.1134/S1063782616060038
- ID: 197253
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详细
The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.
作者简介
L. Danilov
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: danleon84@mail.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. Petukhov
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
M. Mikhailova
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
G. Zegrya
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. Ivanov
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. Yakovlev
Ioffe Physical–Technical Institute
Email: danleon84@mail.ru
俄罗斯联邦, ul. Politekhnicheskaya 26, St. Petersburg, 194021