On the ohmicity of Schottky contacts
- 作者: Sachenko A.1, Belyaev A.1, Konakova R.1
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隶属关系:
- Lashkaryov Institute of Semiconductor Physics
- 期: 卷 50, 编号 6 (2016)
- 页面: 761-768
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197237
- DOI: https://doi.org/10.1134/S106378261606021X
- ID: 197237
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详细
The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current of majority charge carriers and the recombination current of minority carriers in Schottky contacts with a dielectric gap. Based on an analysis of the predictions of this model, ohmicity criteria are obtained for Schottky contacts and the conditions for a low injection level and the ohmicity of Si-based Schottky contacts are compared. It is shown that the conditions for Schottky-contact ohmicity do not coincide with those for p–n junctions.
作者简介
A. Sachenko
Lashkaryov Institute of Semiconductor Physics
编辑信件的主要联系方式.
Email: sach@isp.kiev.ua
乌克兰, Kyiv, 03028
A. Belyaev
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
乌克兰, Kyiv, 03028
R. Konakova
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
乌克兰, Kyiv, 03028