Lifetime of excitons localized in Si nanocrystals in amorphous silicon
- 作者: Gusev O.1, Belolipetskiy A.1, Yassievich I.1, Kukin A.2, Terukova E.2, Terukov E.2
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隶属关系:
- Ioffe Institute
- R and D Center of thin-film technology for energetic under Ioffe Physicotechnical Institute
- 期: 卷 50, 编号 5 (2016)
- 页面: 627-631
- 栏目: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197096
- DOI: https://doi.org/10.1134/S1063782616050092
- ID: 197096
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详细
The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state of the amorphous matrix.
作者简介
O. Gusev
Ioffe Institute
Email: alexey.belolipetskiy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Belolipetskiy
Ioffe Institute
编辑信件的主要联系方式.
Email: alexey.belolipetskiy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Yassievich
Ioffe Institute
Email: alexey.belolipetskiy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kukin
R and D Center of thin-film technology for energetic under Ioffe Physicotechnical Institute
Email: alexey.belolipetskiy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Terukova
R and D Center of thin-film technology for energetic under Ioffe Physicotechnical Institute
Email: alexey.belolipetskiy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Terukov
R and D Center of thin-film technology for energetic under Ioffe Physicotechnical Institute
Email: alexey.belolipetskiy@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021