Atomic steps on an ultraflat Si(111) surface upon sublimation
- 作者: Sitnikov S.1, Latyshev A.1,2, Kosolobov S.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 50, 编号 5 (2016)
- 页面: 596-600
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/197068
- DOI: https://doi.org/10.1134/S1063782616050201
- ID: 197068
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详细
The kinetics of atomic steps on an ultraflat Si(111) surface is studied by in situ ultrahigh-vacuum reflection electron microscopy at temperatures of 1050–1350°C. For the first time it is experimentally shown that the rate of displacement of an atomic step during sublimation nonlinearly depends on the width of the adjacent terrace. It is established that the atomic mechanism of mass-transport processes at the surface at temperatures higher than 1200°C is controlled by nucleation and the diffusion of surface vacancies rather than of adsorbed Si atoms. The studies make it possible to estimate the activation energy of the dissolution of vacancies from the surface into the bulk of Si. The estimated activation energy is (4.3 ± 0.05) eV.
作者简介
S. Sitnikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
S. Kosolobov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090