High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time
- 作者: Gusev A.1,2, Lyubutin S.1, Rukin S.1, Tsyranov S.1,2
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隶属关系:
- Institute of Electrophysics
- Yeltsin Ural Federal University
- 期: 卷 50, 编号 3 (2016)
- 页面: 394-403
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196921
- DOI: https://doi.org/10.1134/S1063782616030106
- ID: 196921
如何引用文章
详细
High-power thyristor switching from the blocking to conducting state via an overvoltage pulse with nanosecond rise time is studied. Low-frequency tablet thyristors with an operating voltage of 2 kV are used in the experiments. An external pulse providing a voltage rise rate from 0.5 to 6 kV/ns was applied to the thyristors main electrodes. Under these conditions, the time of thyristor switching to the conducting state is 200–400 ps. Empirical relations between the main switching characteristics, i.e., the turn-on voltage, pulse rise time before switching, and time of thyristor switching to the conducting state, are obtained. Numerical simulation shows that the ionization of deep technological defects should be taken into account to explain the results obtained.
作者简介
A. Gusev
Institute of Electrophysics; Yeltsin Ural Federal University
Email: rukin@iep.uran.ru
俄罗斯联邦, ul. Amundsena 106, Yekaterinburg, 620016; ul. Mira 19, Yekaterinburg, 620002
S. Lyubutin
Institute of Electrophysics
Email: rukin@iep.uran.ru
俄罗斯联邦, ul. Amundsena 106, Yekaterinburg, 620016
S. Rukin
Institute of Electrophysics
编辑信件的主要联系方式.
Email: rukin@iep.uran.ru
俄罗斯联邦, ul. Amundsena 106, Yekaterinburg, 620016
S. Tsyranov
Institute of Electrophysics; Yeltsin Ural Federal University
Email: rukin@iep.uran.ru
俄罗斯联邦, ul. Amundsena 106, Yekaterinburg, 620016; ul. Mira 19, Yekaterinburg, 620002