电邮这篇文章 Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation
- 作者: Popov V.1
-
隶属关系:
- National Nuclear Research University MEPhI
- 期: 卷 50, 编号 3 (2016)
- 页面: 349-351
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196891
- DOI: https://doi.org/10.1134/S1063782616030209
- ID: 196891
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详细
The results of an experimental study of how surface defects are formed at the Si–SiO2 interface at γ-radiation dose rates of P = 0.1 and 1.0 rad/s are reported. It is found that the surface defects are formed in two stages. The defect-formation mechanisms are analyzed.
作者简介
V. Popov
National Nuclear Research University MEPhI
编辑信件的主要联系方式.
Email: wdpopov@mail.ru
俄罗斯联邦, Moscow, 115409
