Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
- 作者: Galiev G.1, Klimov E.1, Grekhov M.2, Pushkarev S.1, Lavrukhin D.1, Maltsev P.1
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隶属关系:
- Institute of Ultra High Frequency Semiconductor Electronics
- National Research Nuclear University “MEPhI”
- 期: 卷 50, 编号 2 (2016)
- 页面: 195-203
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196767
- DOI: https://doi.org/10.1134/S1063782616020081
- ID: 196767
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详细
Undoped, uniformly Si-doped, and δ-Si-doped GaAs layers grown by molecular-beam epitaxy on (100)- and (111)A-oriented GaAs substrates at a temperature of 230°C are studied. The As4 pressure is varied. The surface roughness of the sample is established by atomic-force microscopy; the crystal quality, by X-ray diffraction measurements; and the energy levels of different defects, by photoluminescence spectroscopy at a temperature of 79 K. It is shown that the crystal structure is more imperfect in the case of GaAs(111)A substrates. The effect of the As4 flux during growth on the structure of low-temperature GaAs grown on different types of substrates is shown as well.
作者简介
G. Galiev
Institute of Ultra High Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: galiev_galib@mail.ru
俄罗斯联邦, Moscow, 117105
E. Klimov
Institute of Ultra High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
俄罗斯联邦, Moscow, 117105
M. Grekhov
National Research Nuclear University “MEPhI”
Email: galiev_galib@mail.ru
俄罗斯联邦, Moscow, 115409
S. Pushkarev
Institute of Ultra High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
俄罗斯联邦, Moscow, 117105
D. Lavrukhin
Institute of Ultra High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
俄罗斯联邦, Moscow, 117105
P. Maltsev
Institute of Ultra High Frequency Semiconductor Electronics
Email: galiev_galib@mail.ru
俄罗斯联邦, Moscow, 117105