Информация об авторе
Krasil’nik, Z. F.
Выпуск | Раздел | Название | Файл |
Том 50, № 11 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates | |
Том 50, № 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells | |
Том 53, № 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |