Информация об авторе
Krayovskyy, V. Ya.
| Выпуск | Раздел | Название | Файл |
| Том 50, № 7 (2016) | Electronic Properties of Semiconductors | Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor | |
| Том 51, № 2 (2017) | Electronic Properties of Semiconductors | Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |