| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells |
|
| Том 50, № 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
|
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures |
|
| Том 52, № 13 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
|
