Информация об авторе
Latyshev, P. E.
| Выпуск | Раздел | Название | Файл |
| Том 50, № 5 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |