Информация об авторе
Rautskii, M. V.
Выпуск | Раздел | Название | Файл |
Том 52, № 5 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology | Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001) | |
Том 52, № 14 (2018) | Spin-Related Phenomena in Nanostructures | Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices | |
Том 53, № 14 (2019) | Nanostructure Devices | Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures |