Информация об авторе
Eliseyev, I. A.
Выпуск | Раздел | Название | Файл |
Том 51, № 8 (2017) | Carbon Systems | Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) | |
Том 52, № 14 (2018) | Graphene | High Quality Graphene Grown by Sublimation on 4H-SiC (0001) | |
Том 53, № 11 (2019) | Surfaces, Interfaces, and Thin Films | Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions | |
Том 53, № 14 (2019) | Nanostructures Characterization | Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |