Информация об авторе
Afanasyev, A. V.
Выпуск | Раздел | Название | Файл |
Том 50, № 1 (2016) | Physics of Semiconductor Devices | Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide | |
Том 50, № 6 (2016) | Physics of Semiconductor Devices | Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |