Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters
- Авторы: Karlina L.1, Vlasov A.1, Shvarts M.1, Soshnikov I.1,2, Smirnova I.1, Komissarenko F.3, Ankudinov A.1
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Учреждения:
- Ioffe Institute
- St. Petersburg Academic University
- ITMO University
- Выпуск: Том 53, № 12 (2019)
- Страницы: 1705-1708
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207418
- DOI: https://doi.org/10.1134/S1063782619160115
- ID: 207418
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Аннотация
The possibility of using lateral Ga(In)AsP nanostructures grown by the catalytic method in a quasi-closed volume from phosphorus and indium vapors on the GaAs (100) surface as an antireflection coating for photovoltaic devices is considered for the first time. It is shown that, at a fixed growth temperature, it is possible to control the surface morphology by changing the growth duration. The surface morphology is examined by scanning electron and atomic force microscopies. It is shown that the antireflection properties of the surface in the range 400–800 nm are related to its structure. The use of such a coating in GaAs-based photocells demonstrated a significant increase in the external quantum yield of photovoltaic converters.
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Об авторах
L. Karlina
Ioffe Institute
Автор, ответственный за переписку.
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Shvarts
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Soshnikov
Ioffe Institute; St. Petersburg Academic University
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
I. Smirnova
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021
F. Komissarenko
ITMO University
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 197101
A. Ankudinov
Ioffe Institute
Email: karlin@mail.ioffe.ru
Россия, St. Petersburg, 194021