Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers
- Авторы: Podoskin A.1, Romanovich D.1, Shashkin I.1, Gavrina P.1, Sokolova Z.1, Slipchenko S.1, Pikhtin N.1
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Учреждения:
- Ioffe Institute
- Выпуск: Том 53, № 6 (2019)
- Страницы: 828-832
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206369
- DOI: https://doi.org/10.1134/S1063782619060162
- ID: 206369
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Аннотация
This study is concerned with the specific features of how high-Q closed modes operating on the total-internal-reflection effect in large-size (up to hundreds or thousands of wavelengths) rectangular resonators based on InGaAs/GaAs/AlGaAs laser heterostructures are formed. The specific features of the spectral composition and spatial configurations of closed-mode configurations are experimentally examined. The presence of frequency combs in the spectra is demonstrated and their correspondence to the separate spatial configurations of closed modes is shown. The effect of changing the pumping level and the temperature on the mode composition of the emission is also considered.
Об авторах
A. Podoskin
Ioffe Institute
Автор, ответственный за переписку.
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
D. Romanovich
Ioffe Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
I. Shashkin
Ioffe Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
P. Gavrina
Ioffe Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
Z. Sokolova
Ioffe Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
S. Slipchenko
Ioffe Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Pikhtin
Ioffe Institute
Email: podoskin@mail.ioffe.ru
Россия, St. Petersburg, 194021