Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing
- Авторы: Petrov A.1, Sitnikov S.1, Kosolobov S.2, Latyshev A.1,3
-
Учреждения:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Skolkovo Institute of Science and Technology
- Novosibirsk State University
- Выпуск: Том 53, № 4 (2019)
- Страницы: 434-438
- Раздел: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205923
- DOI: https://doi.org/10.1134/S1063782619040237
- ID: 205923
Цитировать
Аннотация
The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga+) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius Rcrit, which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching Rcrit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.
Об авторах
A. Petrov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: alexey_petrov@isp.nsc.ru
Россия, Novosibirsk, 630090
S. Sitnikov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: alexey_petrov@isp.nsc.ru
Россия, Novosibirsk, 630090
S. Kosolobov
Skolkovo Institute of Science and Technology
Email: alexey_petrov@isp.nsc.ru
Россия, Skolkovo, Moscow oblast, 143026
A. Latyshev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: alexey_petrov@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090