Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures
- Авторы: Podolska N.1, Rodin P.1
-
Учреждения:
- Ioffe Institute
- Выпуск: Том 53, № 3 (2019)
- Страницы: 379-384
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205874
- DOI: https://doi.org/10.1134/S1063782619030151
- ID: 205874
Цитировать
Аннотация
The simulations of recently discovered effect of subnanosecond avalanche switching of Si n+−n−n+-structures have been performed. The electric field in n+−n−n+-structure is shown to remain quasi-uniform along the current flow direction during the voltage rise stage and it reaches the effective threshold of impact ionization of ~200 kV/cm in the whole n-base. Comparing simulation results with experiments we argue that the field distribution is as well uniform in the transverse direction. Hense, the ultrafast avalanche transient develops quasi-uniformly in the whole n-base volume. The switching time is about ~150 ps. We compare numerical results obtained for various impact ionization models and estimate parameters of the initial voltage pulse that are required for ultrafast avalanche switching of n+−n−n+-structures.
Об авторах
N. Podolska
Ioffe Institute
Автор, ответственный за переписку.
Email: natalia@scc.ioffe.ru
Россия, St. Petersburg, 194021
P. Rodin
Ioffe Institute
Email: natalia@scc.ioffe.ru
Россия, St. Petersburg, 194021