A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers
- Авторы: Zubov F.1, Muretova M.1, Asryan L.2, Semenova E.3, Maximov M.1, Korenev V.1, Savelyev A.1, Zhukov A.1
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Учреждения:
- St. Petersburg National Research Academic University of the Russian Academy of Sciences
- Virginia Polytechnic Institute and State University
- DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark
- Выпуск: Том 52, № 14 (2018)
- Страницы: 1905-1908
- Раздел: Lasers and Optoelectronic Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205159
- DOI: https://doi.org/10.1134/S1063782618140336
- ID: 205159
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Аннотация
A search for materials suitable for implementation of 1.55 µm Al-free diode lasers based on InP with asymmetric barrier (AB) layers is conducted. It is shown that a very high (over 106) suppression ratio of the parasitic electron flux can be achieved using common III–V alloys for the ABs. Hence placing such ABs in the immediate vicinity of the active region should completely suppress the parasitic recombination in the waveguide. Several optimal AB designs are proposed that are based on one of the following alloys: Al-free GaInPSb, ternary AlInAs, or quaternary AlGaInAs with a low Al-content. As an important and beneficial byproduct of utilization of such ABs, an improvement of majority carrier capture into the active region occurs.
Об авторах
F. Zubov
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Автор, ответственный за переписку.
Email: fedyazu@mail.ru
Россия, St. Petersburg
M. Muretova
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg
L. Asryan
Virginia Polytechnic Institute and State University
Email: fedyazu@mail.ru
США, Blacksburg, Virginia
E. Semenova
DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark
Email: fedyazu@mail.ru
Дания, Kongens Lyngby
M. Maximov
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg
V. Korenev
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg
A. Savelyev
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg
A. Zhukov
St. Petersburg National Research Academic University of the Russian Academy of Sciences
Email: fedyazu@mail.ru
Россия, St. Petersburg