Features of the Electron Mobility in the n-InSe Layered Semiconductor

Аннотация

The dependences of the Hall electron mobility of n-InSe single crystals grown by the Bridgman method on a sample’s technological history, temperature, electric field, doping, and illumination are experimentally investigated. It is established that at temperatures below room temperature, the dependences of the electron mobility on external factors, initial resistivity, and doping are anomalous, i.e., do not obey the theory of free carrier mobility in quasi-ordered crystalline semiconductors. The observed anomalies are attributed to partial disordering and fluctuation of the potential of free energy bands of the n-InSe single crystals and can be controlled by temperature, electric field, doping, and illumination.