On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films
- Авторы: Volodin V.1,2, Rui Z.2, Krivyakin G.1,2, Antonenko A.2, Stoffel M.3, Rinnert H.3, Vergnat M.3
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Учреждения:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Université de Lorraine, Institut Jean Lamour UMR CNRS 7198
- Выпуск: Том 52, № 9 (2018)
- Страницы: 1178-1187
- Раздел: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204050
- DOI: https://doi.org/10.1134/S1063782618090233
- ID: 204050
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Аннотация
The study is concerned with light-emitting Ge nanocrystals formed during the annealing of Gex[SiO2]1 –x films produced by the high-vacuum cosputtering of germanium and quartz targets onto substrates at a temperature of 100°C. In accordance with the conditions of growth, the Ge molar fraction was varied from 10 to 40%. By means of electron microscopy and Raman spectroscopy, amorphous Ge nanoclusters ~4–5 nm in dimensions are detected in as-deposited films with a Ge content higher than 20 mol %. To crystallize amorphous nanoclusters, annealing at temperatures of up to 650°C is used. The kinetics of the crystallization of Ge nanoclusters is studied, and it is established that up to ~1/3 of the amorphous phase is retained in the system, supposedly at the interfaces between nanocrystals and the surrounding amorphous SiO2 matrix. It is found that, upon annealing in normal atmosphere, germanium nanoclusters are partially or completely oxidized (at a Ge molar fraction of 30% and smaller). An intense infrared photoluminescence signal from quantum-confined Ge nanocrystals and a visible photoluminescence signal defined by defect complexes (oxygen vacancy + excess Ge atoms) are observed.
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Об авторах
V. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Автор, ответственный за переписку.
Email: volodin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
Zhang Rui
Novosibirsk State University
Email: volodin@isp.nsc.ru
Россия, Novosibirsk, 630090
G. Krivyakin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: volodin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
A. Antonenko
Novosibirsk State University
Email: volodin@isp.nsc.ru
Россия, Novosibirsk, 630090
M. Stoffel
Université de Lorraine, Institut Jean Lamour UMR CNRS 7198
Email: volodin@isp.nsc.ru
Франция, B.P. 70239, Vandœvre-lés-Nancy Cedex, 54506
H. Rinnert
Université de Lorraine, Institut Jean Lamour UMR CNRS 7198
Email: volodin@isp.nsc.ru
Франция, B.P. 70239, Vandœvre-lés-Nancy Cedex, 54506
M. Vergnat
Université de Lorraine, Institut Jean Lamour UMR CNRS 7198
Email: volodin@isp.nsc.ru
Франция, B.P. 70239, Vandœvre-lés-Nancy Cedex, 54506